Atomic Layer Deposition (ALD)-Technology

ALD is a deposition process based on the surface chemical reaction of at least two precursors. The process enables layer-by-layer growth of high-quality films with thicknesses in the range of 1-100 nm.

A steadily growing selection of ALD materials enables new innovative sensor applications. As a member institute of the Forschungsfabrik Mikroelektronik Deutschland (FMD) the Fraunhofer IMS acts as ALD competence center. ALD technology for 200 mm wafers is available at the Fraunhofer IMS.

You can benefit from these advantages:

Production of layers on substrates with complicated geometries and structures. The excellent side wall coverage of ALD layers in cavities with a high aspect ratio enables applications in the field of 3D technologies (e.g. DRAM).
Ultra-thin layers with a layer thickness accuracy at the Ångström level
The deposited ultra-thin layers are of high quality, high density and almost free of pinholes. This makes it possible to use them as hermetic protective layers for implants of various kinds.
Customized process development for your application. We offer you maximum flexibility to develop processes on whole wafers (up to 200 mm), on chip level and on other 3D objects.
We perform precursor screenings to find a suitable ALD precursor for your application. In cooperation with our partners, suitable ALD precursors can also be developed.
A growing variety of materials is available: metals, oxides, sulfides and nitrides, 2D materials, as well as inorganic-organic hybrid materials are provided by Fraunhofer IMS.
Scalable processes from single wafers to batch coating

You can benefit from these established materials for your application

Expand all Close all

Development Completed

Material	Temperature Range	Typical Film Thickness	Typical Homogenity	Typical Composition	Applications
Al₂O₃	80 °C - 300 °C	1 nm - 200 nm	> 98 %	> 99.5 %	High-k gate dielectric, biocompatible protective encapsulation
Ta₂O₅	100 °C - 250 °C	1 nm - 200 nm	> 97 %	> 98.5 %	High-k gate dielectric, biocompatible protective encapsulation
ZnO	80 °C - 250 °C	5 nm - 50 nm	> 96 %	> 99.9 %	Semiconductor, active sensor material (e.g. gas sensors)
TiAlCN	380 °C - 400 °C	5 nm - 50 nm	> 90 %	> 80 %	Conductor, thermal barrier coating
TiN	300 °C - 400 °C	5 nm - 50 nm	> 85 %	> 92 %	Conductor, adheasion promoter for metal deposition (e.g. Ru)
Ru	300 °C - 325 °C	30 nm - 50 nm	> 95 %	86 % (13 % O)	Metallic conductor, interconnect, catalyst material
MoS₂	100 °C	10 nm - 40 nm	> 90 %	87% (12% O)	New 2D-TMDC, semiconductor, channel material
LiPON	300 °C	10 nm - 50 nm	> 95 %	-	Solid state electrolyte, integrated batteries
TiO₂	100 °C	5 nm - 100 nm	-	-	Transparent dielectric oxide, biocompatible encapsulation

Under Development

Material	Temperature Range	Typical Film Thickness	Typical Film Thickness	Typical Film Thickness	Applications
WS₂	300 °C - 350 °C	10 nm - 40 nm	-	85 %	New 2D-TMDC, semiconductor, sensor material
TiO₂/ Al₂O₃	100 °C	10 nm - 100 nm	-	-	New 2D-TMDC, semiconductor, sensor material
AZO	-	-	-	-	Transparent conducting oxide, LCD, TFT, photovoltaics
HfO₂	-	-	-	-	High-k gate dielectric, biocompatible encapsulation

Future developments

Material	Temperature Range	Typical Film Thickness	Typical Homogenity	Typical Composition	Applications
HfS₂	-	-	-	-	Neues 2D-TMDC, Halbleiter, Sensormaterial
Y₂O₃	-	-	-	-	Dielektrikum mit hohem k-Faktor, Schutzkapselung
Cu	-	-	-	-	Metallischer Leiter, Verbindung in der Mikroelektronik
SiO₂	-	-	-	-	Gate-Dielektrikum, Isolator in Halbleiterbauelementen

You can benefit from these ALD IMS specialties:

Since the process temperature during ALD deposition is low compared to conventional CVD processes, ALD layers can be deposited particularly well on substrates with integrated circuits, i.e. on CMOS wafers. Thus, ALD technology can be used for various MEMS, NEMS or CMOS-related applications, such as:

Development of new precursors, processes and materials for molecular sensors, e.g. chemiresistive gas sensors and biosensors with a focus on transition metal dichalcogenides (2D-TMDC) materials such as MoS₂ and WS₂
Cost-effective 3D-NEMS technologies for the generation of free-standing nanostructures on CMOS surfaces with the highest reproducibility have been developed and patented by the Fraunhofer IMS.
Media-resistant layers for sensor applications such as pressure sensors or for the encapsulation of medical implants. Nanolaminates are available as ALD passivation. Further ALD materials can be implemented at the Fraunhofer IMS upon request.
Electrical or optical shielding can be produced by metallic layers such as ruthenium (Ru). Furthermore, ALD layers can be used as transparent conductive electrode layers, for example for optical sensors or solar cell applications.

Our technologies - Innovations for your products

3D Integration

3D integration using wafer-to-wafer bonding (W2W) and chip-to-wafer bonding (C2W) enables cost reduction through higher integration density and shorter interconnect distance.

3D Integration

Microbolometer

Technology process for the production of customized uncooled infrared sensors for applications in the wavelength range 3 µm to 5 µm or 8 µm to 14 µm.

Microbolometer

Vacuum Chip-Scale-Package

We have implemented the smallest possible vacuum package for uncooled IR imagers using vacuum chip scale packages (CSP) technology.

Vacuum Chip-Scale-Package

Pressure Sensors

We operate processes for the manufacture of pressure sensor systems in both CMOS and MST production lines.

Pressure Sensors

SPAD in focus

Highly sensitive image sensors with adapted microlens arrays

SPAD in focus

Technology (Home)

Here you can get back to the overview page of the core competence Technology.

Core Competence Technology