Special Technologies at Fraunhofer IMS

These include the high-temperature technology as a cost-effective and reliable solution for measurement technology in harsh environments. Furthermore, we offer customer-specific CMOS processes with a minimum structure size of 0.35 µm as well as pressure sensor systems and external technology development for the development and extension of our customers' technologies.

The high-temperature 0.35 µm SOI-CMOS technology provides the technological basis for manufacturing complex integrated circuits for a temperature range from -55 °C up to 300 °C. In the high-temperature technology, precise analog components, e.g. for sensor readout, can be realized as well as complex digital functions up to the microcontroller. The technology was developed at Fraunhofer IMS and currently represents the most advanced technology for high-temperature integrated circuits worldwide. The minimum structure size of only 350 nm is unmatched in the field of other high-temperature technologies and allows the realization of mixed-signal systems even with complex digital parts up to the microcontroller.

As a further special technology, Fraunhofer IMS offers its experience in the field of customized CMOS processes. The Fraunhofer IMS optimizes CMOS processes by integrating further functions such as high voltage resistant components, high frequency circuits and sensors or develops technologies that enable the use of the circuit under harsh conditions.

The preparation of CMOS wafers as "smart" substrates by e.g. planarization is also an important development task. On these "intelligent substrates" layers are deposited by post-CMOS processes, structured and thus new, innovative components are realized on the CMOS circuits.

In addition, the Fraunhofer IMS has been known for years for its expertise in the production of pressure sensors. The IMS develops application-specific pressure sensors for medical applications for various applications from low pressure/vacuum over the barometric pressure range up to pressures of several 10 bar. The existing know-how covers different proven technological approaches for the production of pressure sensors - integrated in or integrated on CMOS circuits. Both piezoresistive or capacitive sensor elements can be realized for the electrical detection of the quantity pressure.

Our many years of experience in the field of technology development is not only used in our own clean rooms, we also support our customers in the development of their own technologies. This ranges from the characterization of individual components to the extension of our customers' technologies with additional components or options up to the development of complete technologies in the customers' manufacturing facilities. In addition, technologies or process modules have already been transferred from Fraunhofer IMS to customers' manufacturing sites.

Details on the topic of special technology at the Fraunhofer IMS can be found in the following links.