Microsystems Technology Lab&Fab

Microsystems technology and microelectronics merge closely to create compact “intelligent“ sensors and actors. The Microsystems technology (MST or MOEMS micro opto electro-mechanical systems) expands the CMOS-technology. MST provides sensor and actor functions, CMOS supplies the electronics. MST processes use semiconductor equipment and benefit from the versatile experience which has been built up by the silicon semiconductor technology.

If very small systems are needed, small signals have to be read out over a distance as short as possible, or if you have an array of sensors, the integration of the MST structures directly on the CMOS is suitable. By this, the application possibilities of CMOS technology can be largely extended without falling back on expensive scaling to smallest structures.

Therefore, the IMS has built up its MST Lab&Fab with the support of the Land NRW, the BMBF and the EU. In this facility we use post-processing on CMOS to develop production processes and complete intelligent microsystems for our customers.

CMOS wafer serve as “intelligent” substrates with analogue and digital trigger, read out or interface circuits up to wireless sensor data transmission. Layers, structures and devices are directly integrated on theses substrates. The results are compact “intelligent” single-chip microsystems.

In comparison to the CMOS line, a great variety of materials is available (e.g. Cu, amorphous SiGe, AI2O3). The choice of the substrate can be made flexibly. We gladly offer our CMOS wafer with approved interface. Post-processing on customer wafers with 200 m Ø is also possible. The equipment of the MST Lab&Fab offers versatile development possibilities.

The IMS is your professional partner in the development of process steps, process modules and complete microtechnical sensor systems.

Product Range and Service

As a professional player in the field of microsystems technology and its design the Fraunhofer IMS offers the following services:

MST Process steps and modules:

Deposition and structuring of layers on 200 mm CMOS – wafers e. g. amorphous Si/Ge, DLC, SiO2, Si3N4, atomic layer deposition (e.g. AL2O3, Ta2O5), PVD of metals, vapor deposition of layers (e. g. special materials) and layer systems, electroplating of Cu, Sn, Ni, Au

  • Lithography with precise adjustment of the < 200 mm wafer front and back side
  • Color filter and micro lenses for optical devices
  • Si-deep etching
  • Wafer-to-wafer and chip-to-wafer bonding

MST process and process module development:

  • development and transfer of process modules for the production of “stand alone” MOEMS and functional micro structures like sieves, membranes etc.
  • development and transfer of overall processes for the processing of integrated MOEMS on bulk or SOI-CMOS substrates
  • production of prototypes in small series in the customer-specific processes in the CMOS and MST lines
  • performance of customer-specific studies

Application fields:

  • microbolometer-arrays for LWIR
  • mechanical sensors e. g. pressure sensors or acoustic transducer
  • optical special components
  • sensor elements e. g. for biosensors or chemical sensors


The MST Lab&Fab infrastructure enables the application of complex MST processes on 200 mm wafers. In addition to the high-resolution lithography, the modern etching processes (including isotropic etching with HF and XeF2, TSV) have to be highlighted particularly.

The MST Lab&Fab offers the following possibilities:

Layer deposition

  • metallization (physical vapor deposition)
  • (PE) CVD (oxides, nitrides, aSi (Ge), DLC, SiC etc.…)
  • Atomic Layer Deposition

Etching processes

  • isotropic etching with XeF2 and HF
  • deep etching (Bosch process)
  • plasma etching (anisotropic)
  • wet etching of different materials

Wafer-/Chip modification

  • wafer-to-wafer bonding
  • thinning of wafer
  • flip-chip bonding
  • wafer structuring (Bosch process)
  • Cu/Ni/Sn- and Au electro-plating
  • oven processes (Annealing, oxidation)


  • conventional (1-3 µm) and thick photo resists (up to 20 µm)
  • polyamide, color filter, microlenses
  • contact lithography (mask aligner)
  • 350 nm wafer stepper with precise back to front alignment

Measuring technique

  • ellipsometer/reflectometer
  • AFM
  • high-resolution electron microscope
  • deflection, 4-point-resistance, step height
  • CD/overlay

CMOS Clean Room and ASIC Services