Fraunhofer IMS has a long time experience in both, design of CMOS photodetectors and image sensors, as well as in process and component simulation, processing and characterization. A 8-zoll CMOS-line is available and certified according to the automotive industry standards and even a microsystem technology labor that offers various possibilities in wafing-post-processing. Our customers profit from our standard 0.35 µm CMOS process especially optimized for the application of the optical sensors. Special developed readout-circuits and clever algorithmics lead to fast and secure measurement results. By using innovative wafer-link-technologies, so called backside illuminated (BSI) image sensors can be produced that therefore show improved optical characteristics and a higher fill factor. With our process and the corresponding photo diodes we can cover the further spectra ranging from X-ray over EUV, UV, and the visible range up to near infrared.
Current topics are the 3D-sensor technology in which latest detectors and systems for LiDAR (Light-Detection-and-Ranging) are developed. LiDAR is a time-of-flight measurement method for the determination of object distances and comes to use et al. as sensors for autonomous driving and in the field of industrial robotics. Further topics are very fast line-sensors with the highest object resolution, the increased signal-efficiency of the temporally controlled raman spectroscopy and the Embedding of CCDs into the CMOS-process (Embedded CCD) for image sensors in space.
We offer our customers designs that meet their requirements based on Fraunhofer IMS CMOS processes or foundry processes for the pilot fabrication. Furthermore our offer includes special services in the field of wafer-post-processing, process optimization, the electro-optical characterization and of course our “know-how”. If you need an application specific image sensor with special performance features and beyond state-of-the-art, do not hesitate to contact us. We will gladly accept the challenge!